Why is copper tellurium plating difficult?

The adhesion of vacuum coating is poor and easy to fall off

There are many kinds of plating. Are you talking about water plating?

The film thickness of water plating is thicker than that of vacuum splash plating, and the film thickness of water plating is generally 15-20um

The thickness of the film is generally 0.5 ~ 2um. Different chemical solutions for water plating will have different colors.

The color of the target material is different, the power and grade of the vacuum plating are different.

Sputter plating

Sputtering is to bombard the target with argon ion, knock out the target atoms into gas phase and deposit them on the substrate.Tellurium Copper Machining Splash plating has a wide range of application characteristics, almost any material can be electrodeposited.

1) advantages and limitations of splash plating

I) advantages

A) no pollution

B) multi-purpose

C) good adhesion

II) restriction

A) limited target manufacturing

B) damage to targets, such as ceramic targets, limits the range of energy used

C) low plating rate

2) splashing system

I) classification

A) plane two pole type: the target material is the negative pole, and the base material is the positive pole

B) three pole type: a system composed of anode, cathode and external electronic source. An external electron source produces a gas molecule with an electric field to accelerate the ionization of the positive electrode. A three pole system cannot be used for reactive sputtering because electrons can affect reactive gases and contaminating filaments.

C) magnetron sputtering: using magnetic field to improve the sputtering rate

D) reactive sputtering: the reactive gas is introduced into the vacuum chamber, and a compound is generated with the metal atom for plating.

II) classification of current

A) DC sputter – for conductive substrates and coatings

B) AC (or RF) splash plating – applied to conductive or non-conductive substrates and coatings

3) combination of sputtering system

I) target material

The coating material deposited on the substrate by bombarding with positive ions in the plasma; the target material is usually the cathode.

II) flux of splashing

The flux of sputtering is the flux of sputtering atoms. The composition of the flow atom is the same as that of the cooled target without internal diffusion. The sputtering rate of all materials of the same target is approximately the same. However, the rate of evaporation is not the same.

III) Earth Shield

The ion is limited to bombarding and splashing the target only, so as to avoid the target clamp being splashed. The distance between the shield and the target must be less than the thickness of dark space, so it is relatively close when it is used at high frequency (13.5mhz) or high voltage.

IV) baffle

A c145 c14500 tellurium copper machining movable plate arranged between two electrodes. In general, when the cleaning target is splashed (the target may be polluted by the atmosphere during loading or operation), it is moved between the target and the substrate.

V) target cooling

When the energy input system is applied, the temperature of the target will increase, and the combination of the target and the fixture will be damaged, so it must be cooled. Generally, the target is cooled with water.

VI) control of substrate temperature

Use resistance and light source to heat. In general, the surface temperature of the substrate is higher than that of the bulk due to glow discharge.

4) splashing of insulator

The insulating film can be sputtered by RF or reactive sputtering. If direct current sputtering is used, the surface charge will accumulate rapidly and the sputtering is impossible.

I) RF sputtering

The RF power supply with the frequency of 13.56 MHz is used, so that the target and the coating surface can be bombarded alternately by ions and electrons to avoid the accumulation of charges.

II) advantages of RF sputtering

A) the efficiency of electron bombardment ionization is higher and the operating pressure is lower

B) reduce the arc (the generation of arc is due to dust or heating evaporated gas)

III) reactive sputtering

The reactive gas is added to argon, such as Ar + H2S, and forms cadmium sulfide with sputtered atoms, such as cadmium. (for example, titanium nitride is formed by splashing titanium in argon plus nitrogen). It can be DC or RF reactive sputtering.

5) magnetron sputtering

“Magnetron” means “magnetized electron”

I) advantages and disadvantages

Although magnetron sputtering can increase the sputtering rate, it can also accelerate the target loss. Due to the large distance between the substrate and the plasma, the substrate can be sputtered at low operating temperature.

II) operation method

It consists of a combination of vertical electric and magnetic fields. Due to the interaction of electromagnetism, the electrons are concentrated near the target to enhance the ionization effect, as shown in the figure below.

A) the C145 TELLURIUM COPPER MACHINED magnetic field will make the surface of the negative electrode form an electron gathering place, and the ions will gather due to the electrostatic effect of the limited electronic source.

B) the electron can gather on the target surface effectively, which can improve the ionization efficiency and the sputtering rate.