Toshiba’s Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules will Contribute to Smaller, More Efficient Industrial Equipment

January 26, 2022

Toshiba Electronic Devices & Storage Corporation

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Motor control equipment
  • High frequency DC-DC converter
  • Mounting compatible with Si IGBT modules
  • Lower loss than Si IGBT modules
     VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
     Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
     VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
     Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
  • Built-in NTC Thermistor

Follow the links below for more on the new products.


Follow the link for more on Toshiba’s SiC Power Devices.

SiC Power Devices

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