Toshiba MG200J2YS50

Toshiba MG200J2YS50

#MG200J2YS50 Toshiba MG200J2YS50 New IGBT: 200A600V, MG200J2YS50 pictures, MG200J2YS50 price, #MG200J2YS50 supplier

MG200J2YS50 Description

High Power Switching Applications Motor Control Applications
.The electrodes are isolated from case.
.High input impedance
.Includes a complete half bridge in one package.
.Enhancement-mode
.High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A)
.Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A)
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 200A
Collector current 1ms ICP 400 A
Forward current DC IF 200A
Forward current 1ms IFM 400 A
Collector power dissipation (Tc = 25°C) PC 900 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −40 ~ 125 °C
Isolation voltage VIsol 2500 (AC 1 min.) V
Screw torque (Terminal / mounting) ― 3 / 3 N·m

IGBT: 200A600V