Toshiba MG200H1AL2

Toshiba  MG200H1AL2
MG200H1AL2 Description
TRANSISTOR MODULE; 200 Amp; 450 Volt; 210 g.MG200H1AL2  0.46 lbs
Target_Applications
MG200H1AL2 could be used in High Power Switching Applications Motor Control Applications
Features
NPN, Si, POWER TRANSISTOR
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:800W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.0/3.5 *1 N·m
IGBT Module 200A/450V/GTR/2U