Toshiba MG100J6ES52

Toshiba  MG100J6ES52
MG100J6ES52 Description

MG100J6ES52 transistor module; 100 Amp; 600 Volt. Silicon N channel IGBT; which has a wide application as high power and high speed switching. It is featured with high input impedance and enhancement-mode.

MG100J6ES52  1.10 lbs Target_Applications MG100J6ES52 could be used in High Power Switching / Motor Control Applications Features N Channel IGBT (High Power Switching / Motor Control Applications)