Toshiba Introduces 80V N-Channel Power MOSFETs Using Its Latest Generation Process to Help Improve Power Supply Efficiency

Shanghai, China, March 30, 2020 – Toshiba Electronic components & Storage Corporation (“Toshiba”) today announced that it has added 80V N, manufactured using its latest generation process, to its “U-MOS XH Series” product line Trench Power MOSFETs – TPH2R408QM and TPN19008QM. The new MOSFETs are suitable for switching power supplies for industrial equipment used in data centers and communication base stations.

Toshiba Introduces 80V N-Channel Power MOSFETs Using Its Latest Generation Process to Help Improve Power Supply Efficiency 

U-MOS XH series product diagram

New products include “TPH2R408QM” in a surface mount SOP Advance package and “TPN19008QM” in a TSON Advance package. Products start shipping today.

Due to its latest generation process manufacturing technology, the new 80V U-MOS XH products have approximately 40% lower drain-source on-resistance compared to the 80V products in the current U-MOS VIII-H series.By optimizing device structure, drain-source on-resistance and gate charge characteristics[1]The balance between the[2].Therefore, the new product offers the industry’s lowest[3]power consumption.

Toshiba is expanding its line of power-reducing products to help reduce device power consumption.

application:

Switching power supplies (high-efficiency AC-DC converters, DC-DC converters, etc.)

Motor control devices (motor drives, etc.)

characteristic:

Industry’s lowest power dissipation (through improved on-resistance and gate charge characteristics[2]balance)

Industry’s lowest on-resistance:

RDS(ON)=2.43mΩ(Max)@VGS=10V(TPH2R40QM)

RDS(ON)=19mΩ(Max)@VGS=10V(TPN19008QM)

High rated channel temperature: Tch=175℃

Main Specifications: (@Ta = 25°C unless otherwise stated)

Isometric notes:

  [1] Total gate charge (gate source + gate drain), gate switch charge, output charge.

  [2] Compared with TPH4R008NH (U-MOS Ⅷ-H series), TPH2R408QM has about 15% improvement in drain-source on-resistance x total gate charge, about 10% improvement in drain-source on-resistance x gate switch charge, and The on-resistance x output charge improvement is about 31%.

  [3] As of March 30, 2019, Toshiba research.

  

The Links:   1MBI600PX-120 EL512256-H2