TOSHIBA GT30F123

TOSHIBA GT30F123

#GT30F123 Toshiba GT30F123 New • Insulated Gate Bipolar Transistor , GT30F123 pictures, GT30F123 price, #GT30F123 supplier

30F123/ GT30F123 IGBT
• Breakdown Voltage VCES (V) @Ta = 25˚C : 300V
• IGBT Current Rating IC (A) @Ta = 25˚C : 200A
• Insulated Gate Bipolar Transistor
• Case Style: TO220SIS/ Short Leads 
• Insulated Gate Bipolar Transistor