Sell IR IRF3007S New Stock

#IRF3007S IR IRF3007S New Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3, IRF3007S pictures, IRF3007S price, #IRF3007S supplier
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Email: sales@shunlongwei.com

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Manufacturer Part Number: IRF3007S
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PSSO-G2
Manufacturer: Infineon Technologies AG
Risk Rank: 5.67
Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas): 946 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 75 V
Drain Current-Max (ID): 62 A
Drain-source On Resistance-Max: 0.0126 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-263AB
JESD-30 Code: R-PSSO-G2
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 320 A
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

Shunlongwei Inspected Every IRF3007S Before Ship, All IRF3007S with 6 months warranty.

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