Product News 2021-12
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of press pack Injection Enhanced Gate Transistor (IEGT) “ST2000GXH32” that employs trench type IEGT chips and newly developed high-speed diode chips for high voltage converters. This product has a collector-emitter voltage rating of 4500 V and a collector current (DC) rating of 2000 A.
The structure of cathode in the diode suppresses voltage oscillation during reverse recovery, improves reverse recovery tolerance. The newly developed voltage blocking structure realizes of withstand voltage at high temperature. Compared with the Toshiba’s existing product, new product ST2000GXH32 suppresses voltage oscillation during small reverse recovery current. This allows use of a small gate-drive resistor (RG(on)) and reduces turn-on switching loss (Eon) by approximately 30 % from 12.0 J to 8.4 J (typical). Furthermore, the improved cathode enhances the peak power during reverse recovery by approximately 29 %. Furthermore, junction temperature rating (Tj) of ST2000GXH32 has been increased from 125 °C to 150 °C (maximum) by improving high temperature tolerance of the diode.
ST2000GXH32 contributes to size reduction and energy saving of high-voltage industrial equipment such as DC power transmissions, static VAR compensators, and motor drive inverters and converters.
- DC power transmission
- Static VAR compensator
- Industrial motor drive
- Low turn-on switching loss:
Eon(typ.)=8.4 J (@VCC=2800 V, IC=2000 A, RG(on)=3.6 Ω, LS≈300 nH, Tj=150 ℃)
- Wide reverse recovery safe operating area
- Maximum junction temperature rating: Tj(max)=150 ℃
Information in this document, including product prices and specifications, content of services and contact information, is currect on the date of the announcement but is subject to change without prior notice.