Mitsubishi QM30TB1-H

Mitsubishi QM30TB1-H

#QM30TB1-H Mitsubishi QM30TB1-H New Mitsubishi IGBT POWER TRANSISTOR MODULE , QM30TB1-H pictures, QM30TB1-H price, #QM30TB1-H supplier

Options
.also available with powerfull chopper. For characteristics please refer to Inverter IGBT
1)Theatsink=25°C, unless otherwise specified
2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery)
.For diagrams of the Chopper IGBT please fefer to QM30TB1-H
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1000V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector power dissipation Pc:400W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
 

Mitsubishi IGBT POWER TRANSISTOR MODULE