Mitsubishi QM150DY-HK

Mitsubishi   QM150DY-HK
QM150DY-HK Description

IGBT Power Transistor Modules 150A/600V/GTR/2U QM150DY-HK

 
• IC Collector current …………………… 100A
• VCEX Collector-emitter voltage ……….. 1200V
• hFE DC current gain…………………………. 75
• Insulated Type
• UL Recognized
• Isolation voltage Charged part to case, AC for 1 minute 2500V
• Collector dissipation TC=25°C…….. 800W
• Junction temperature Tj ……………….+150°C
• Storage temperature Tstg…………..-40 to +125°C
• Mounting screw torque ………………..3.0 *1 N·m
• Typical value Weight …………………470g
Mitsubishi Power Transistor ModuleS HIGH POWER SWITCHING USE INSULATED TYPE 100 Amp 1200 Vol