IXYS IXSN55N120AU1

IXYS IXSN55N120AU1 IXYS IXSN55N120AU1 IXYS IXSN55N120AU1 IXYS IXSN55N120AU1

#IXSN55N120AU1 IXYS IXSN55N120AU1 New Insulated Gate Bipolar Transistor 110A I(C) 1200V V(BR)CES N-Channel MINIBLOC-4, IXSN55N120AU1 pictures, IXSN55N120AU1 price, #IXSN55N120AU1 supplier

Manufacturer Part Number: IXSN55N120AU1
Pbfree Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: IXYS CORP
Package Description: MINIBLOC-4
Pin Count: 4
Manufacturer: IXYS Corporation
Risk Rank: 5.8
Additional Feature: HIGH SPEED
Case Connection: ISOLATED
Collector Current-Max (IC): 110 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max: 8 V
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation Ambient-Max: 500 W
Power Dissipation-Max (Abs): 500 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Nickel (Ni)
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor 110A I(C) 1200V V(BR)CES N-Channel MINIBLOC-4