Infineon SKM800GA126DH14

Infineon SKM800GA126DH14 Infineon SKM800GA126DH14

#SKM800GA126DH14 Infineon SKM800GA126DH14 New Introduction of Infineon`s 12 inch wafer fab locations in Villach Austria and Dresden Germany in addition to Infineon’s 8 inch wafer fab location in Villach Austria., SKM800GA126DH14 pictures, SKM800GA126DH14 price, #SKM800GA126DH14 supplier

IGBT Module: SKM800GA126DH14
Features 
· Low VCE(sat) 
· Compact package 
· P.C. board mount 
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier 
· Uninterruptible power supply
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:35A
Collector current Icp:70A
Collector power dissipation Pc:180W
Collector-Emitter voltage VCES:1000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m

Introduction of Infineon`s 12 inch wafer fab locations in Villach Austria and Dresden Germany in addition to Infineon’s 8 inch wafer fab location in Villach Austria.