Infineon FF225R12ME4

Infineon FF225R12ME4 Infineon FF225R12ME4 Infineon FF225R12ME4

#FF225R12ME4 Infineon FF225R12ME4 New Infineon made IGBT Modules FF225R12ME4 IGBT 1200V 225A, FF225R12ME4 pictures, FF225R12ME4 price, #FF225R12ME4 supplier

Product: IGBT Silicon Modules
Collector– Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1050 W
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Technology: Si
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Part # Aliases: SP000405064 FF225R12ME4 BOSA1

Infineon made IGBT Modules FF225R12ME4 IGBT 1200V 225A