Hitachi PM45502C

Hitachi  PM45502C
#PM45502C Hitachi power module
Target_Applications: High Speed Power Switching
Features Absolute Maxinun Ratings((Tc=25°C)(Per FET chip)
Drain source voltage 450 V
Gate source voltage ±20 V
Drain current ID 50 A
Drain peak current ID(peak) 100 A
Chammel disssipation 300 W
Channel temperature Tch 150 °C
Storage temperature Tstg -45~125 °C
Insulation dielectric Visol*2 2000 V
Hitachi IGBT Module 2MOS: 50A / 300V /450V

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