Fuji 6MBP50NA060

Fuji 6MBP50NA060 Fuji 6MBP50NA060 Fuji 6MBP50NA060

#6MBP50NA060 Fuji 6MBP50NA060 New Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES N-Channel, 6MBP50NA060 pictures, 6MBP50NA060 price, #6MBP50NA060 supplier

Manufacturer Part Number: 6MBP50NA060-01
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Package Description: FLANGE MOUNT, R-PUFM-X22
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.84
Additional Feature: HIGH RELIABILITY
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 600 V
Configuration: COMPLEX
JESD-30 Code: R-PUFM-X22
Number of Elements: 6
Number of Terminals: 22
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 3600 ns
Turn-on Time-Nom (ton): 300 ns
VCEsat-Max: 2.9 V
Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES N-Channel