Fuji 2MBI200U4H-120

Fuji   2MBI200U4H-120
Transistor Polarity: N Channel
DC Collector Current: 200A
Collector Emitter Saturation Voltage Vce(on): 2.05V
Power Dissipation Pd: 1.04kW
Collector Emitter Voltage V(br)ceo: 1.2kV
Transistor Case Style: Module
No. of Pins: 7Pins
Operating Temperature Max: 150°C
Product Range: –
Transistor Type: IGBT Module
MSL: -SVHC: To Be Advised
2MBI200U4H-120-50 IGBT Array & Module Transistor N Channel 200 A 2.05 V 1.04 kW 1.2 kV Module