FF200R12KE3
Product Category: IGBT Modules FF200R12KE3Manufacturer: InfineonRoHS: YESConfiguration: DualCollector- Emitter Voltage VCEO Max: 1200 VCollector-Emitter Saturation Voltage: 1.7 VContinuous Collector Current at 25 C: 200 AGate-Emitter Leakage Current: 400 nAPd – Power Dissipation: 1.05 kWPackage / Case: IS5a ( 62 mm )-7Maximum Operating Temperature: + 125 CBrand: Infineon TechnologiesHeight: 30.9 mmLength: 106.4 mmMaximum Gate Emitter Voltage: +/- 20 VMinimum Operating Temperature: – 40 CMounting Style: ScrewFactory Pack Quantity: 10Width: 61.4 mm
Click Here For More Details,Infineon FF200R12KE3 66 Pcs Available,IGBT Modules 1200V 200A DUAL, FF200R12KE3
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