FF200R12KE3

Product Category: IGBT Modules  FF200R12KE3
Manufacturer: Infineon
RoHS: YES
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 200 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1.05 kW
Package / Case: IS5a ( 62 mm )-7
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 30.9 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm

Click Here For More Details,Infineon FF200R12KE3 66 Pcs Available,IGBT Modules 1200V 200A DUAL, FF200R12KE3

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