Bipolar transistors and switching diodes whose junction temperature ratings have been extended to 150 °C for a wider range of applications

Product News 2021-05

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has extended the junction temperature ratings of 65 bipolar transistor and switching diode products from 125 °C to 150 °C. This has expanded the range of their applications and allows easier thermal design.
Electronic components used in power supplies and similar equipment are required to extend their operating temperature ranges as they are used at high ambient temperatures. To meet this requirement, the junction temperature ratings of general purpose small-signal devices are being extended. So far, the junction temperature ratings of MOSFETs, bias resistor built-in transistors (digital transistors), and TVS diodes (ESD protection diodes) have been extended to 150 °C. The extension this time allows Toshiba’s discrete semiconductor products to be selected more easily for a wider range of applications.
The products covered by this extension are 30 bipolar transistors mounted in seven types of small packages[1] and 35 switching diodes mounted in 10 types of small packages[2]. Part numbers have not been changed from those of products whose junction temperature ratings are 125 °C.
This extension is for customers with whom delivery specification documents have been exchanged stating junction temperature ratings of 150 °C on data sheets. Please contact our sales representatives for details.


  • Junction temperature ratings extended from 125 °C to 150 °C.
  • Power supplies, industrial equipment, etc.[3]

(@Ta=25 °C)

(@Ta=25 °C)

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.